All stock codes associated to this product
KHX1600C9D3K3/12, 740617161618
KHX1600C9D3K3/12GX
12GB (4GB 512M x 64-Bit x 3 pcs.) DDR3-1600MHz
CL9 240-Pin DIMM Kit
Kingston's KHX1600C9D3K3/12GX is a kit of three 512M x 64-bit 4GB (4096MB) DDR3-1600MHz CL9 SDRAM
(Synchronous DRAM) memory modules, based on sixteen 256M x 8-bit DDR3 FBGA components per module. Each
module kit supports Intel® XMP (Extreme Memory Profiles). Total kit capacity is 12GB. Each module kit has been tested
to run at DDR3-1600MHz at a low latency timing of 9-9-9-27 at 1.65V. The SPDs are programmed to JEDEC standard
latency DDR3-1333MHz timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers and requires +1.5V.
The JEDEC standard electrical and mechanical specifications are as follows:
Features
JEDEC standard 1.5V ± 0.075V Power Supply
VDDQ = 1.5V ± 0.075V
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 5,6,7,8,9,10
Posted CAS
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4
which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), double sided component
Performance
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin) 110ns
Row Active Time (tRASmin) 36ns (min.)
Power 1.800 W (operating per module)
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
