KINKVR13E9/8I | Kingston 8GB (2 x 4GB) 1333MHz DDR3 ECC CL9 DIMM

8GB (4GB 2Rx8 512M x 72-Bit x 2 pcs.)
PC3-10600 CL9 240-Pin ECC DIMM Kit

 

ValueRAM's KVR13E9K2/8I is a kit two 512M x 72-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 2Rx8, ECC, Intel Compatibility Tested, Memory Modules, based on eight teen 256m x   x   8 - b i t   F BGA   c omp o n e n t s   p e r  mo d u l e .   T o t a l   k i t c a p a c i t y   i s   8GB .   T h e   S PDs   a r e   p r o g r amme d   t o   J EDEC  s t a n -
d a r d   l a t e n c y  DDR3 - 1 3 3 3   t imi n g   o f   9 - 9 - 9   a t   1 . 5 V .   E a c h   2 4 0 - p i n DIMM  u s e s   g o l d   c o n t a c t   f i n g e r s .   T h e   e l e c t r i c a l   a n d  me c h a n i c a l s p e c i f i c a t i o n s   a r e   a s   f o l l ows:

 

 

JEDEC standard 1.5V (1.425V ~1.575V) Power Supply

 

VDDQ = 1.5V (1.425V ~ 1.575V)

 

667MHz fCK for 1333Mb/sec/pin

 

8 independent internal bank

 

Programmable CAS Latency: 9, 8, 7, 6

 

Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

 

Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)

 

8-bit pre-fetch

 

Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or
MRS]

 

Bi-directional Differential Data Strobe

 

Thermal Sensor Grade B

 

Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

 

On Die Termination using ODT pin

Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C

 

Asynchronous Reset

 

PCB: Height 1.18” (30mm), double sided component

 

CL(IDD): 9 cycles
Row Cycle Time (tRCmin): 49.5ns (min.)
Refresh to Active/Refresh: 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin): 36ns (min.)
Maximum Operating Power: 2.700 W* (per module)
UL Rating: 94 V - 0

Operating Temperature: 0o C to 85o C
Storage Temperature: -55o C to +100o C