All stock codes associated to this product
KHX16C9B1RK2/8X, 740617210316
KHX16C9B1RK2/8X
8GB (4GB 512M x 64-Bit x 2 pcs.)
DDR3-1600 CL9 240-Pin DIMM Kit
DESCRIPTION
Kingston's KHX16C9B1RK2/8X is a kit of two 512M x 64-bit (4GB) DDR3-1600 CL9 SDRAM (Synchronous DRAM) 2Rx8 memory modules, based on sixteen 256M x 8-bit DDR3 FBGA components per module. Each module kit supports Intel® XMP (Extreme Memory Profiles). Total kit capacity is 8GB. Each module kit has been tested to run at DDR3-1600 at a low latency timing of 9-9-9 at 1.65V. The SPDs are programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V.
Each 240-pin DIMM uses gold contact fingers and requires +1.5V. The JEDEC standard electrical and mechanical specifications are as follows:
XMP TIMING PARAMETERS
JEDEC: DDR3-1333 CL9-9-9 @1.5V
XMP Profile #1: D3-1600 CL9-9-9 @1.65V
FEATURES
JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 9, 8, 7, 6
Posted CAS
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or
MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), double sided component
SPECIFICATIONS
CL(IDD): 9 cycles
Row Cycle Time (tRCmin): 49.5ns (min.)
Refresh to Active/Refresh: 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin): 36ns (min.)
Maximum Operating Power: 2.400 W* (per module)
UL Rating: 94 V - 0
Operating Temperature: 0o C to 85o C
Storage Temperature: -55o C to +100o C
Power will vary depending on the SDRAM used.
