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All stock codes associated to this product
KHX18LS11P1K2/16, 740617222296
KHX18LS11P1K2/16
16GB (8GB 2Rx8 1G x 64-Bit x 2 pcs.) DDR3L-1866 CL11 204-Pin SODIMM Kit Supports Kingston HyperX Plug and Play (PnP).
Description
Kingston's KHX18LS11P1K2/16 is a kit of two 1G x 64-bit (8GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 2Rx8 low voltage memory modules, based on sixteen 512M x 8-bit DDR3 FBGA components per module. Total kit capacity is 16GB. Each module kit has been tested to run at JEDEC DDR3L-1866 at a low latency timing of 11-11-11 at 1.35V. Additional timing parameters are shown in the PnP Timing Parameters section. Each 204-pin SODIMM uses gold contact fingers and requires 1.35V or +1.5V. The electrical and mechanical specifications are as follows:
Features
JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
933MHz fCK for 1866Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
Posted CAS
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 9 (DDR3-1866)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C
Asynchronous Reset
PCB : Height 1.180 (30.00mm), double sided component
SPECIFICATIONS
CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 47.91ns (min.)
Refresh to Active/Refresh 260ns (min.) Command Time (tRFCmin)
Row Active Time (tRASmin) 32ns (min.)
Maximum Operating Power TBD W* (per module) (DDR3-1600 CL9-9-9 @ 1.35V)
UL Rating 94 V - 0
Operating Temperature 0oC to 85oC
Storage Temperature -55oC to +100oC