All stock codes associated to this product
KHX16C9K2/16, 740617204858
KHX16C9K2/16
-16GB (8GB 1G x 64-Bit x 2 pcs.)
-DDR3-1600 CL9 240-Pin DIMM Kit
SPECIFICATIONS
CL(IDD) |
9 Cycles |
Row Cycle Time (tRCmin |
49.5ns (min.) |
Refresh to Active/Refresh
Command Time (tRFCmin)
|
260ns (min.) |
Row Active Time (tRASmin) |
36ns (min.) |
maximum Operating Power |
2.460W (per module) |
UL Rating |
94V - 0 |
Operating Temperature |
0 to 85 Degrees Celcius |
Storage Temperature |
-55 to 100 Degrees Celcius |
Power will vary depending on the SDRAM used.
DESCRIPTION
Kingston's KHX16C9K2/16 is a kit of two 1G x 64-bit (8GB) DDR3-1600 CL9 SDRAM (Synchronous DRAM), 2Rx8 memory modules, based on sixteen 512M x 8-bit FBGA components per module. Total kit capacity is 16GB. Each module kit has been tested to run at DDR3-1600 at a low latency timing of 9-9-9 at 1.5V. The SPDs are programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers.
FEATURES
- JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 667MHz fCK for 1333Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 9, 8, 7, 6
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB : Height 1.18” (30.00mm) w/ heatsink, double sided component