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All stock codes associated to this product
KHX16S9P1K2/16, 740617207194
KHX16S9P1K2/16
16GB (8GB 2Rx8 1G x 64-Bit x 2 pcs.)
DDR3-1600MHz CL9 204-Pin SODIMM Kit
Supports Kingston HyperX Plug and Play (PnP)
DESCRIPTION
Kingston's KHX16S9P1K2/16 is a kit of two 1G x 64-bit (8GB) DDR3-1600 CL9 SDRAM (Synchronous DRAM) 2Rx8 memory modules, based on sixteen 512M x 8-bit DDR3 FBGA compo-nents per module. Total kit capacity is 16GB. Each module kit has been tested to run at JEDEC DDR3-1600 at a low latency timing of 9-9-9 at 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section. Each 204-pin SODIMM uses gold contact fingers and requires +1.5V. The electrical and mechanical specifications are as follows:
PnP JEDEC TIMING PARAMETERS:
DDR3-1600 CL9-9-9 @1.5V
DDR3-1333 CL8-8-8 @1.5V
DDR3-1066 CL6-6-6 @1.5V
FEATURES
- JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 800MHz fCK for 1600Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
- Posted CAS
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Write Latency(CWL) = 8 (DDR3-1600)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C
- Asynchronous Reset
- PCB : Height 1.180 (30.00mm), double sided component
SPECIFICATIONS
- CL(IDD): 9 cycles
- Row Cycle Time (tRCmin): 48.125ns (min.)
- efresh to Active/Refresh: 260ns (min.)
- Command Time (tRFCmin)
- Row Active Time (tRASmin): 33.75ns (min.)
- Maximum Operating Power: TBD W* (per module)
- UL Rating: 94 V - 0
- Operating Temperature: 0oC to 85oC
- Storage Temperature: -55oC to +100oC