All stock codes associated to this product
KHX13C9B1R/4
KHX13C9B1R/4
4GB 512M x 64-Bit DDR3-1333
CL9 240-Pin DIMM
DESCRIPTION
HyperX KHX13C9B1R/4 is a 512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM) 1Rx8 memory module, based on eight 512M x 8-bit DDR3 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333
timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers and requires +1.5V. The JEDEC standard electrical and mechanical specifications are as follows:
FEATURES
JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 9, 8, 7, 6
Posted CAS
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE< 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), single sided component
SPECIFICATIONS
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Maximum Operating Power 2.100 W*
UL Rating 94 V - 0
Operating Temperature 0oC to 85oC
Storage Temperature -55oC to +100oC
Power will vary depending on the SDRAM used