All stock codes associated to this product
KHX24C11T3K4/16X, 2322531, 740617213676
KHX24C11T3K4/16X
16GB (4GB 512M x 64-Bit x 4 pcs.)
DDR3-2400 CL11 240-Pin DIMM Kit
DESCRIPTION
HyperX KHX24C11T3K4/16X is a kit of four 512M x 64-bit (4GB) DDR3-2400 CL11 SDRAM (Synchronous DRAM) 1Rx8 memory modules, based on eight 512M x 8-bit DDR3 FBGA components per module. Each module kit supports
Intel ® XMP (Extreme Memory Profiles). Total kit capacity is 16GB. Each module kit has been tested to run at DDR3-2400 at a low latency timing of 11-13-13 at 1.65V. The SPDs are pro-grammed to JEDEC standard latency DDR3-1333 timing of
9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers and requires +1.5V. The JEDEC standard electrical and mechanical specifications are as follows:
XMP TIMING PARAMETERS
- JEDEC: DDR3-1333 CL9-9-9 @1.5V
- XMP Profile #1: D3-2400 CL11-13-13 @1.65V
- XMP Profile #2: D3-2133 CL11-12-12 @1.65V
FEATURES
- JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 667MHz fCK for 1333Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 9, 8, 7, 6
- Posted CAS
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE< 95°C
- Asynchronous Reset
- PCB : Height 1.827” (46.41mm) w/ heatsink, single sided component
SPECIFICATIONS
- CL(IDD) 9 cycles
- Row Cycle Time (tRCmin) 49.5ns (min.)
- Refresh to Active/Refresh 260ns (min.)
- Command Time (tRFCmin)
- Row Active Time (tRASmin) 36ns (min.)
- Maximum Operating Power 2.100 W* (per module)
- UL Rating 94 V - 0
- Operating Temperature 0oC to 85oC
- Storage Temperature -55oC to +100oC
Power will vary depending on the SDRAM used
