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All stock codes associated to this product
KHX1866C11S3P1K2/8G, X1866C11S3P1K28G, 740617184488
Kingston's KHX1866C11S3P1K2/8G is a kit of two 512M x 64- bit (4GB) DDR3-1866 CL11 SDRAM (Synchronous DRAM) 2Rx8 memory modules, based on sixteen 256M x 8-bit DDR3 FBGA components per module. Total kit capacity is 8GB. Each module kit has been tested to run at JEDEC DDR3-1866 at a low latency timing of 11-11-11 at 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section. Each 204-pin SODIMM uses gold contact fingers and requires +1.5V. The electrical and mechanical specifications are as follows:
Note: PnP implementation is only possible in configurations that include a BIOS that supports the PnP function. Your maximum speed will be determined by your BIOS.
Features
- JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 933MHz fCK for 1866Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
- Posted CAS
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Write Latency(CWL) = 9 (DDR3-1866)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB : Height 1.180” (30.00mm), double sided component
Specifications
- CL(IDD) 11 cycles
- Row Cycle Time (tRCmin) 47.91ns (min.)
- Refresh to Active/Refresh 160ns (min.)
- Command Time (tRFCmin)
- Row Active Time (tRASmin) 32ns (min.)
- Power (Operating) TBD* (per module)
- UL Rating 94 V - 0
- Operating Temperature 0o C to 85o C
- Storage Temperature -55o C to +100o C
*Power will vary depending on the SDRAM used.