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All stock codes associated to this product
KVR13LSE9/8, 740617212549
KVR13LSE9/8
8GB 2Rx8 1G x 72-Bit PC3L-10600
CL9 204-Pin ECC SODIMM
DESCRIPTION
This document describes ValueRAM's 1G x 72-bit (8GB) DDR3L-1333 CL9 SDRAM (Synchronous DRAM), 2Rx8, ECC, low voltage, memory module, based on eighteen 512M x 8-bit FBGA components. The SPD is programmed to JEDEC stan-dard latency DDR3-1333 timing of 9-9-9 at 1.35V or 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
FEATURES
JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
rogrammable CAS Write Latency(CWL) = 7 (DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Thermal Sensor Grade B
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C
Asynchronous Reset
PCB: Height 1.18 (30mm), double sided component
SPECIFICATIONS
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Power (Operating) (per module) (1.35V) = 2.308 W*
(1.50V) = 2.767 W*
UL Rating 94 V - 0
Operating Temperature 0oC to 85oC
Storage Temperature -55oC to +100oC
