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All stock codes associated to this product
KHX16LS9P1K2/8, 740617213300
KHX16LS9P1K2/8
- 8GB (4GB 1Rx8 512M x 64-Bit x 2 pcs.)
- DDR3L-1600 CL9 204-Pin SODIMM Kit
- Supports Kingston HyperX Plug and Play (PnP)
DESCRIPTION
Kingston's KHX16LS9P1K2/8 is a kit of two 512M x 64-bit (4GB) DDR3L-1600 CL9 SDRAM (Synchronous DRAM) 1Rx8 low voltage memory modules, based on eight 512M x 8-bit DDR3 FBGA components per module. Total kit capacity is 8GB. Each module kit has been tested to run at JEDEC DDR3L-1600 at a low latency timing of 9-9-9 at 1.35V. Additional timing parameters are shown in the PnP Timing Parameters section. Each 204-pin SODIMM uses gold contact fingers and requires 1.35V or +1.5V. The electrical and mechanical specifications are as follows:
Note: PnP implementation is only possible in configurations that include a BIOS that supports the PnP function. Your maximum speed will be determined by your BIOS.
PnP JEDEC TIMING PARAMETERS:
- DDR3-1600 CL9-9-9 @1.35V or 1.5
- DDR3-1333 CL8-8-8 @1.35V or 1.5V
- DDR3-1066 CL6-6-6 @1.35V or 1.5V
SPECIFICATIONS
| CL(IDD) |
9 Cycles |
| Row Cycle Time (tRCmin) |
48.125ns (min.) |
|
Refresh to Active/Refresh
Command Time (tRFCmin)
|
260ns (min.) |
| Row Active Time (tRASmin) |
33.75ns (min.) |
| Maximum Operating Power |
TBD W* (per module)
(DDR3-1600 CL9-9-9 @ 1.37V)
|
| UL Rating |
94 V - 0 |
| Operating Temperature |
0 to 85 Degrees Celcius |
| Storage Temperature |
-55 to 100 Degrees Celcius |
*Power will vary depending on the SDRAM used.
FEATURES
- JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply
- VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
- 800MHz fCK for 1600Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 11, 10, 9, 8, 7, 6
- Posted CAS
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Write Latency(CWL) = 8 (DDR3-1600)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C,
- 9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB : Height 1.180” (30.00mm), double sided component
