Please choose carefully, we are unable to refund or exchange for incorrect choice. ECC memory is generally system/server specific and we recommend the use of our Kingston memory selector to ensure compatibility
All stock codes associated to this product
KVR16LSE11/4, 740617219609
KVR16LSE11/4
4GB 1Rx8 512M x 72-Bit PC3L-12800
CL11 204-Pin ECC SODIMM
DESCRIPTION
This document describes ValueRAM's 512M x 72-bit (4GB) DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, ECC, low voltage, memory module, based on nine 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
FEATURES
- JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~1.575V) Power Supply
- VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
- 800MHz fCK for 1600Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 11, 10, 9, 8, 7, 6
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Thermal Sensor Grade B
- Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB: Height 1.18” (30mm), double sided component
SPECIFICATIONS
- CL(IDD): 11 cycles
- Row Cycle Time (tRCmin): 48.125ns (min.)
- Refresh to Active/Refresh: 260ns (min.)
- Command Time (tRFCmin)
- Row Active Time (tRASmin): 35ns (min.)
- Maximum Operating Power: (1.35V) = 2.065 W* (1.50V) = 2.295 W*
- UL Rating: 94 V - 0
- Operating Temperature: 0o C to 85o C
- Storage Temperature: -55o C to +100o C
- Power will vary depending on the SDRAM.
