All stock codes associated to this product
HX316C10FW/4, 740617230499
HX316C10FW/4
4GB 512M x 64-Bit DDR3-1600
CL10 240-Pin DIMM
DESCRIPTION
HyperX HX316C10FW/4 is a 512M x 64-bit (4GB) DDR3-1600 CL10 SDRAM (Synchronous DRAM) 1Rx8 memory module, based on eight 512M x 8-bit DDR3 FBGA components. This module has been tested to run at DDR3-1600 at a low latency timing of 10-10-10 at 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below. The JEDEC standard electrical and mechanical specifications are as follows:
PnP JEDEC TIMING PARAMETERS:
DDR3-1600 CL10-10-10 @1.5V
DDR3-1333 CL9-9-9 @1.5V
DDR3-1066 CL7-7-7 @1.5V
FEATURES
- JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 800MHz fCK for 1600Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 11, 10, 9, 8, 7, 6
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C
- Asynchronous Reset
- PCB : Height 1.180 (30.00mm), single sided component
SPECIFICATIONS
- CL(IDD) 10 cycles
- Row Cycle Time (tRCmin) 48.125ns (min.)
- Refresh to Active/Refresh 260ns (min.)
- Command Time (tRFCmin)
- Row Active Time (tRASmin) 37.5ns (min.)
- Maximum Operating Power TBD W*
- UL Rating 94 V - 0
- Operating Temperature 0oC to 85oC
- Storage Temperature -55oC to +100oC
- Power will vary depending on the SDRAM used.
