All stock codes associated to this product
HX316C10FBK2/16, 740617230413
HX316C10FBK2/16
16GB (8GB 1G x 64-Bit x 2 pcs.)
DDR3-1600 CL10 240-Pin DIMM Kit
DESCRIPTION
HyperX HX316C10FBK2/16 is a kit of two 1G x 64-bit (8GB) DDR3-1600 CL10 SDRAM (Synchronous DRAM) 2Rx8 memory modules, based on sixteen 512M x 8-bit DDR3 FBGA compo-nents per module. Total kit capacity is 16GB. Each module kit has been tested to run at DDR3-1600 at a low latency timing of 10-10-10 at 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below. The JEDEC stan-dard electrical and mechanical specifications are as follows:
PnP JEDEC TIMING PARAMETERS:
DDR3-1600 CL10-10-10 @1.5V
DDR3-1333 CL9-9-9 @1.5V
DDR3-1066 CL7-7-7 @1.5V
FEATURES
JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), double sided component
SPECIFICATIONS
CL(IDD) 10 cycles
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 37.5ns (min.)
Maximum Operating Power TBD W* (per module)
UL Rating 94 V - 0
Operating Temperature 0oC to 85oC
Storage Temperature -55oC to +100oC
Power will vary depending on the SDRAM used.
