All stock codes associated to this product
HX426C15FBK4/16, 2881647, 740617240696
HX426C15FBK4/16
16GB (4GB 512M x 64-Bit x 4 pcs.)
DDR4-2666 CL15 288-Pin DIMM
DESCRIPTION
HyperX HX426C15FBK4/16 is a kit of four 512M x 64-bit (4GB) DDR4-2666 CL15 SDRAM (Synchronous DRAM) 1Rx8, memory module, based on eight 512M x 8-bit FBGA components per module. Each module kit supports Intel Extreme Memory Profiles (Intel XMP) 2.0. Total kit capacity is 16GB. Each module has been tested to run at DDR4-2666 at a low latency timing of 15-17-17 at 1.2V. Additional timing parameters are shown in the Plug-N-Play (PnP) Timing Parameters section below. The JEDEC standard electrical and mechanical specifications are as follows:
JEDEC/XMP TIMING PARAMETERS
JEDEC/PnP: DDR4-2666 CL15-17-17 @1.2V
DDR4-2400 CL14-16-16 @1.2V
DDR4-2133 CL12-14-14 @1.2V
XMP Profile #1: DDR4-2666 CL15-17-17 @1.2V
FEATURES
- Power Supply: VDD = 1.2V Typical
- VDDQ = 1.2V Typical
- VPP - 2.5V Typical
- VDDSPD = 2.2V to 3.6V
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- Single-rank
- On-board I2 serial presence-detect (SPD) EEPROM
- 16 internal banks; 4 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8
- via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Fly-by topology
- Terminated control command and address bus
- Height 1.230 (31.25mm), w/o heatsink
Specifications
- CL(IDD): 15 cycles
- Row Cycle Time (tRCmin): 45ns(min.)
- Refresh to Active/Refresh, Command Time (tRFCmin): 260ns(min.)
- Row Active Time (tRASmin): 26.25ns(min.)
- Maximum Operating Power: TBD W*
- UL Rating: 94 V - 0
- Operating Temperature: 0oC to +85oC
- Storage Temperature: -55oC to +100oC
- Power will vary depending on the SDRAM used.
