All stock codes associated to this product
HX321C11T3K2/16, 2714949, 740617235012, 740617213621
HX321C11T3K2/16
16GB (8GB 1G x 64-Bit x 2 pcs.)
DDR3-2133 CL11 240-Pin DIMM Kit
HX321C11T3K2/16
16GB (8GB 1G x 64-Bit x 2 pcs.)
DDR3-2133 CL11 240-Pin DIMM Kit
DESCRIPTION
HyperX HX321C11T3K2/16 is a kit of two 1G x 64-bit (8GB) DDR3-2133 CL11 SDRAM (Synchronous DRAM), 2Rx8 memory modules, based on sixteen 512M x 8-bit FBGA components per module. Each module kit supports Intel® XMP (Extreme Memory Profiles). Total kit capacity is 16GB.
Each module kit has been tested to run at DDR3-2133 at alow latency timing of 11-12-12 at 1.6V. The SPDs are programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.5V. Each 240-pin DIMM uses gold contact fingers. The JEDEC standard electrical and mechanical specifications are as follows:
XMP TIMING PARAMETERS
JEDEC: DDR3-1600 CL11-11-11 @1.5V
XMP Profile #1: DDR3-2133 CL11-12-12 @1.6V
XMP Profile #2: DDR3-1600 CL9-9-9 @1.5V
FEATURES
- JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.5V (1.425V ~ 1.575V)
- 800MHz fCK for 1600Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 11, 10, 9, 8, 7, 6
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C
- Asynchronous Reset
- Height 1.827 (46.41mm) w/ heatsink, double sided component
SPECIFICATIONS
- CL(IDD): 11 Cycles
- Row Cycle Time (tRCmin): 48.125ns (min.)
- Refresh to Active/Refresh, Command Time (tRFCmin): 260ns (min.)
- Row Active Time (tRASmin): 35ns (min.)
- Maximum Operating Power: TBD W* (per module)
- UL Rating: 94 V - 0
- Operating Temperature: 0oC to 85oC
- Storage Temperature: -55oC to +100oC
Power will vary depending on the SDRAM used.
