All stock codes associated to this product
KSM26RS8/8MEI, MEKSD4R1X8G26C19, 740617277388
Kingston KSM26RS8/8MEI 8GB 1Rx8 1G x 72-Bit PC4-2666 CL19 Registered
w/Parity 288-Pin DIMM
Description
Kingston's KSM26RS8/8MEI is a 1G x 72-bit (8GB) DDR4-2666 CL19 SDRAM
(Synchronous DRAM) registered w/ parity, 1Rx8, ECC, memory module, based on nine
1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency
DDR4-2666 timing of 19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact
fingers. The electrical and mechanical specifications are as follows:
Features
- Power Supply: VDD = 1.2V
- VDDQ = 1.2V
- VPP = 2.5V
- VDDSPD = 2.25V to 2.75V
- Functionality and operations comply with the DDR4 SDRAM
datasheet
- 16 internal banks
- Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the
banks in the same or different bank group accesses are available
- Data transfer rates: PC4-2666, PC4-2400, PC4-2133, PC4-1866,
PC4-1600
- Bi-Directional Differential Data Strobe
- 8 bit pre-fetch
- Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
- Supports ECC error correction and detection
- On-Die Termination (ODT)
- Temperature sensor with integrated SPD
- This product is in compliance with the RoHS directive.
- Per DRAM Addressability is supported
- Internal Vref DQ level generation is available
- Write CRC is supported at all speed grades
- CA parity (Command/Address Parity) mode is supported
Specifications
CL(IDD) |
19
cycles |
Row Cycle Time
(tRCmin) |
45.75ns(min.) |
Refresh to
Active/Refresh Command Time (tRFCmin) |
350ns(min.) |
Row Active Time
(tRASmin) |
32ns(min.) |
Maximum Operating
Power |
* |
UL
Rating |
94 V -
0 |
Operating
Temperature |
0o C to +85o
C |
Storage
Temperature |
-55o C to +100o
C |