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All stock codes associated to this product
HX318C9T2K2/8
HX318C9T2K2/8
8GB (4GB 512M x 64-Bit x 2 pcs.)
DDR3-1866 CL9 240-Pin DIMM Kit
DESCRIPTION
HyperX HX318C9T2K2/8 is a kit of two 512M x 64-bit (4GB) DDR3-1866 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory modules, based on eight 512M x 8-bit FBGA omponents per module. Each module kit supports (Extreme Intel XMP Memory Profiles). Total kit capacity is 8GB. Each module kit has been tested to run at DDR3-1866 at a low latency timing of 9-10-11 at 1.5V. The SPDs are programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.5V. Each 240-pin DIMM uses gold contact fingers. The JEDEC standard electrical and mechanical specifications are as follows:
XMP TIMING PARAMETERS
JEDEC: DDR3-1600 CL11-11-11 @1.5V
XMP Profile #1: DDR3-1866 CL9-10-11 @1.5V
XMP Profile #2: DDR3-1600 CL9-9-9 @1.5V
FEATURES
JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11,10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C
Asynchronous Reset
Height 2.122 (53.90mm) w/ heatsink, single sided component
SPECIFICATIONS
CL(IDD): 11 cycles
Row Cycle Time (tRCmin): 48.125ns (min.)
Refresh to Active/Refresh: Command Time (tRFCmin ): 260ns (min.)
Row Active Time (tRASmin): 35ns (min.)
Maximum Operating Power: TBD W* (per module)
UL Rating: 94V-0
Operating Temperature: 0oC to 85oC
Storage Temperature -55oC to +100oC
Power will vary depending on the SDRAM used.
