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All stock codes associated to this product
HX321LS11IB2K2/8, 2781896, 740617237535
HX321LS11IB2K2/8
8GB (4GB 512M x 64-Bit x 2 pcs.) DDR3L-2133
CL11 204-Pin SODIMM Kit
DESCRIPTION
HyperX HX321LS11IB2K2/8 is a kit of two 512M x 64-bit (4GB) DDR3L-2133 CL11 SDRAM (Synchronous DRAM) 1Rx8, low voltage, memory modules, based on eight 512M x 8-bit DDR3 FBGA components per module. Total kit capacity is 8GB. Each module kit has been tested to run at DDR3L-2133 at a low latency timing of 11-12-13 at 1.35V or 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below. The JEDEC standard electrical and mechanical specifications are as follows:
PnP JEDEC TIMING PARAMETERS:
DDR3-2133 CL11-12-13 @1.35V or 1.5V
DDR3-1866 CL10-11-12 @1.35V or 1.5V
DDR3-1600 CL9-9-10 @1.35V or 1.5V
FEATURES
JEDEC standard 1.35V and 1.5V
VDDQ = 1.35V and 1.5V
1066MHz fCK for 2133Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 15, 14, 13, 12, 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 orMRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C
Asynchronous Reset
PCB : Height 1.180 (30.00mm), double sided component
SPECIFICATIONS
CL(IDD): 11 Cycles
Row Cycle Time (tRCmin): 44.22ns (min.)
Refresh to Active/Refresh: Command Time (tRFCmin): 260ns (min.)
Row Active Time (tRASmin) 31.875ns (min.)
Maximum Operating Power: TBD W* @1.35V
UL Rating: 94 V - 0
Operating Temperature: 0C to 85oc
Storage Temperature -55oC to +100oc
